Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB2

Published on 2017-02-10T13:26:13Z (GMT) by Toby Gill
Using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM), we observe a new two-dimensional (2D) silicon crystal that is formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB<sub>2</sub> thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. The 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.<div><br></div><div>In this collection we provide the STM data used in the referenced paper in 2D Materials and details on how the publication figures were produced. This detailed information is provided in the form of a Jupyter notebook (</div>

Cite this collection

Gill, Toby; Fleurence, Antoine; Warner, Ben; Pruser, Henning; Friedlein, Rainer; Hirjibehedin, Cyrus; et al. (2017): Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB2. Hirjibehedin Research Group. Collection.